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（輸入章及標題） 畢業(yè)設計（論文） 數(shù)控高壓水射流切割機 學 院 年級專業(yè) 學生姓名 指導教師 專業(yè)負責 答辯日期 2 任務書 學院： 系級教學單位： 學 號 學生 姓名 專 業(yè) 班 級 機械制造 課 題 題 目 數(shù)控高壓水射流切割機床設計 來 源 自選 主 要 內 容 1. 機床的總體設計 2. 數(shù)控加工平臺（進給系統(tǒng)）設計 3. 數(shù)控功能設計：一周內完成。 4. 水射流切割裝置的設計 5. 過濾裝置的設計 基 本 要 求 1. A0圖三張（包括CAD 圖三張），A1圖紙一張（零件圖） 2. 設計說明書約50頁 3. 翻譯外文資料一篇 參 考 資 料 1.機械設計手冊第2卷（新版），王文斌，機械工業(yè)出版社 2.特種加工，劉晉春 趙家齊等，機械工業(yè)出版社 3.金屬切學機床，戴曙，機械工業(yè)出版社 4.馬水仙。水射流切割裝置。國外金屬加工。2001年第2期等。 周 次 1—4周 5—8周 9—12周 13—16周 17—18周 應 完 成 的 內 容 查找相關資料 編寫開題報告 計算數(shù)據(jù) 計算完成第一張A0圖紙 完成第二章AO圖紙和部分第三張A0圖紙 完成第三張A0圖紙和零件圖 檢查答辯 指導教師：王軍（男） 系級教單位審批： 說明：如計算機輸入，表題黑體小三號字，內容五號字。本任務書一式二份，教師、學生各執(zhí)一份。 附錄2 英文原文 附錄1 英文翻譯 水射流與激光結合加工在半導體中的應用 P. Ogawa, D. Perrottet， F. Wagner， R. Housh， B. Richerzhagen* * SA， Ch Synova. delaDentd’Oche， CH-1024 Ecublens，瑞士 電子郵件： richerzhagen@synova.ch 摘要 最近幾年，半導體晶圓已經占據(jù)了市場的很大一部分，它在復合材料的生產中超過其他硅產品的知名度。由于這些III/V 半導體材料的加工工藝要求高，因此產生了許多與傳統(tǒng)加工不同的加工工藝和方法。不同的切割方法之間存在著顯著差異。在傳統(tǒng)切割中， 由于存在嚴重的熱損失，使工件的切口處產生結晶體。 現(xiàn)在，有了讓人滿意的解決方法---與激光微射流（ lmj ）這一成果 ，一個革命性耦合激光和水射流的技術。這是一種比其他加工方法更快捷和清潔的加工方法，并且能產生很高的加工精度。此外，它可以切割任意的形狀，這在其他傳統(tǒng)加工方法中是不可能的。最后，安全問題不應該忘記。事實上，由于融入了水射流，在加工過程的檢測中沒有發(fā)現(xiàn)產生有毒氣體。 關鍵詞：激光切割，水射流引導激光，砷化鎵，化合物半導體。 1.導言 硅占半導體晶圓市場已經超過三十年。然而，持續(xù)的要求，更高的速度和增加小型化帶動無線電和寬帶通訊行業(yè)的發(fā)展，使III/V半導體材料，如砷化鎵（ GaAs ）的和磷化銦（ InP） 的需求量增大。事實上，這些材料的電學性比純硅更具有優(yōu)勢，它們在高頻率的運作，改善信號接收效果，更好的處理信號在擁擠的頻帶，和增大大的功率效率更有優(yōu)勢。根據(jù)“IC 的洞察”的市場研究（公司總部設在斯科茨代爾，亞利桑那州），在2002年占市場87 ％的份額的化合物半導體集成電路仍然主要是基于砷化鎵。半導體市場已經把他們生產的產品定在這個方向。 “IC 的洞察”調查，在2002年到2007年化合物半導體每年平均的增長率為22%。相較之下，比同一時期的IC市場增長率為10 ％ 。在2000年該化合物半導體IC市場的高峰24.2億美元，但在2002年下跌至16.9億美元。 “IC 的洞察”預測增長強勁，在隨后的歲月，與不斷擴大到2007年，當市場將會擴大一倍以上，達46.5億美元。 今天，砷化鎵市場已不再被認為是為特定盈利市場。最重要的應用不光是無線通信業(yè)，砷化鎵是揭示了它的潛力在光電電子應用在軍事，醫(yī)療，特別是LED照明領域。標準的生產技術仍然需要變得更加適應這一新的高增長的市場。減少芯片尺寸低于500um的規(guī)定，使用更薄的晶圓比100um的，縮小晶圓厚度也有其優(yōu)點，可以降低其溫度梯度。 由于砷化鎵是非常脆弱，改善方法是用樹脂葉片。這需要提高切削速度和質量。此外，考慮制造晶圓的切割過程是精密的，這需要使用新的切割方法，達到高生產率。此外，砷化鎵的價格昂貴也是需要考慮的。另一個不如忽視的重要方面是：制造和加工的化合物半導體，尤其是砷化鎵，對安全有嚴重的威脅。砷化鎵氣體有毒，是引起人類致癌物質。這些事實提出了很多的關注，從環(huán)境，健康和安全的立場。 2 .比較不同的切割方法 目前有三種加工方法，用來加工砷化鎵晶圓，即砂輪切斷，刨切，和激光引導水射流切割。由于砷化鎵的特定屬性，缺點不容忽視，當切割硅晶片，因為劃片砷化鎵在加工時有很多缺點。傳統(tǒng)的切割方法在加工半導體時會遇到很多問題。激光引導水射流切割主要優(yōu)勢切割硅晶圓時的切縫質量高。如果是傳統(tǒng)的切割方法的話，由于硅晶圓非常的脆，加工出高質量的切縫是很難實現(xiàn)的。刨切寬度較大的砷化鎵時，加工面面要拓寬，從而減少芯片數(shù)量的百分之晶圓。此外，由于機械的限制，導致工件的邊緣往往容易破碎，從而使該件無法使用。在一般情況下，要達到一個符合條件的切割質量，切削速度要在3到12mm/s之間，這主要取決于晶圓的厚度，從而大大減緩了整個加工效率。表1顯示的是3種切割方法的比較。 水射流切割可以在同樣的毛配件中切削出更多的工件，既節(jié)約材料降低成本。在加工一個昂貴的復合材料，這是一個真正的優(yōu)勢。舉例來說，晶圓并不總是沿內切線。這往往是晶圓破損的主要原因。這意味著，要清楚處理大量的廢棄晶圓時間和精力。利用激光引導水射流，不需要將它與一個標準的激光看待，可以增加砷化鎵晶圓的切削速度，提高切縫質量。此外，它可以切割任意形狀，包括多項目晶圓，這在傳統(tǒng)切割中是不可能的。 3.水射流引導激光加工 激光引導水射流采用了薄水射流作為一個引導件，以指導工件加工（參見圖1 ） 。除了引導激光，水射流冷卻作用正是它的優(yōu)勢所在，它可以降低切削時的溫度，也就消除了材料的熔融。事實上，在激光引導水射流是一個低溫切割系統(tǒng)，在任何切削過程中檢測的工作的切削溫度不會超過160 ° C的[ 2 ] 。 這種水射流很安全，在晶圓在切割中不存在由于機械和熱而產生的損失（見圖2 ） 。該水射流提供了一個不斷切縫寬度等于直徑的射流，因此，特別是對非常脆和難以加工材料如砷化鎵 ，即使厚度小25 μ m也可加工， （ 25至75 μ m的根據(jù)該噴嘴直徑） 。另一個明顯的優(yōu)勢，這種水射流對于此特定的應用是當工件變薄時它的切削速度和質量會增加，而在傳統(tǒng)切割中，這是剛好相反。薄砷化鎵晶圓，可實現(xiàn)非常高切割速度。 傳統(tǒng)的激光切割砷化鎵時產生大量的碎片，很難消除，甚至可以破壞附近的活性成分。在水射流切割中，這個問題已經克服。使用一種特殊的薄水膜，新技術的具體不斷晶圓清潔和免費的粒子。由此產生的水平芯片的污染，比傳統(tǒng)的切削方法要小得多。 任意形狀的切割，在薄晶圓加工中已變得日益重要，為各種應用在微電子學和醫(yī)學，在其中的任意形狀使用。傳統(tǒng)技術不能提供所需的靈活性和兩維自由度。圖3介紹了水射流全方位的定向切割。左圖的砷化鎵晶圓厚175μm，切縫寬75μm的，所取得的速度15mm/s（點表面上是沒有殘留） 。該切削的晶圓（右側）是250μm厚，切削速度2mm/s 。 4.安全 關于安全問題，多次對水射流測試表明在切割過程中空氣里沒有發(fā)現(xiàn)存在砷化氫的氣體，切割砷化鎵晶圓[ 3 ] ，一個重要的差異，以傳統(tǒng)激光切割為例（見表2 ） 這是不得不令人驚訝，因為激光引導水射流是水射流和再加上在一個很短激光脈沖（約450ns ）相互作用的雷射光與物質。由于有水的存在，在切割時不會產生有毒氣體，而是是有毒氣體溶解到水中。因為廢水中砷的濃度很高，所以廢水應當適當?shù)倪^濾或循環(huán)。與傳統(tǒng)切割相比，激光引導水射流切割砷化鎵不需要任何額外的保安系統(tǒng)。 5 .結論 總括而言，較傳統(tǒng)的切割方法，水射流切割展示了無可爭議的優(yōu)勢。 100μm厚的晶圓可以切割在六60mm/ s和卓越的品質是達成共識。甚至，盡管傳統(tǒng)方法已有所改善所做，多年來，他們將很快取代晶圓變薄和聘用更多的成本和關鍵材料。 參考 [ 1 ] “2003年麥卡琳報告” ，新聞稿， IC 的洞察， 2003年。 [2] N. Dushkina, B. Richerzhagen: “劃片砷化鎵晶圓與 思諾瓦激光微-挑戰(zhàn)，改善和安全 [3] N. Dushkina “安全切割砷化鎵晶圓與雷射器” ，技術文件的工業(yè)標準結構 ，第一卷。 438 ， 175-183 ， 2003 。 附錄2 英文原文 Chipping-free dicing of III/V semiconductor materials with the water P. Ogawa, D. Perrottet, F. Wagner, R. Housh, B. Richerzhagen* * Synova SA, Ch. De la Dent d’Oche, CH-1024 Ecublens, Switzerland E-mail: richerzhagen@synova.ch ABSTRACT For a few years now the semiconductor wafer market has turned a substantial part of its production towards compound materials, faster than the well-known silicon. The mechanical and chemical properties of these III/V semiconductor materials (of which the most used being gallium arsenide, GaAs) require new specialized technologies. In particular, the singulation process is proved to be delicate. Different dicing methods exist, but important differences in results can be observed. The saw creates consequent chipping as well as broken edges. Conventional lasers should be avoided because of important heat damages. The scribe and break method can create cracks that tend to break wafers. The most satisfying results are obtained with the Laser Microjet (LMJ), a revolutionary technology coupling a laser and a water jet. It is faster and cleaner than any other process, and generates an impressive kerf quality. Furthermore, it allows free-shape cutting, which is impossible with blades. At last, the safety question should not be forgotten. In fact, because of the waterjet, no toxic arsenic gas could be detected. Keywords: Laser cutting, Water jet guided laser, GaAs, Compound semiconductors, Chipping-free 1. INTRODUCTION Silicon has dominated the semiconductor wafer market for more than three decades. However, the continuing demands for higher speed and increasing miniaturization have driven the wireless and broadband communications industries to use the brittle and difficult-to-handle, but much faster (meaning higher carrier mobility), III/V semiconductor materials, such as gallium arsenide (GaAs) and indium phosphide (InP). Indeed, these materials’ electrical properties give them several performance advantages over pure Si, including high frequency operation, improved signal reception, better signal processing in congested frequency bands, and greater power efficiency. According to IC Insights, market research firms based in Scottsdale, Arizona, compound semiconductor ICs are still largely based on GaAs, which accounted for 87% of the market in 2002. Most of the big players in the semiconductor market have turned their production in this direction. IC Insights expects the compound semiconductor IC market to experience an average annual growth rate of 22% from 2002 through 2007. In comparison, the total IC market will grow at a rate of 10% over the same time period. The compound semiconductor IC market peaked at $2.42 billion in 2000, but fell to $1.69 billion in 2002. IC Insights forecasts strong growth in the following years, with a continual expansion through 2007, when the market will have more than doubled to $4.65 billion. The GaAs market is no longer considered a niche market. Today, if the most important application remains the wireless communication industry, GaAs is revealing its potential in opto-electronics for applications in the military, the medical and especially the LED lighting domains. Standard production technologies still need to become more adapted to this new high-growth market. Decreasing the chip size below 500μm requires using wafers thinner than 100μm; shrinking the wafers’ thickness also have the advantage of lowering its temperature gradient. The use of GaAs wafers, which might be as thin as 25μm, creates problems when they reach the last level of the production chain – chip singulation. Because GaAs is very brittle and fragile, even improved saw methods using resinoid blades do not provide the desired high cutting speed and yield. Furthermore, considering that dicing is the very last process of wafer manufacturing, which means that the wafer has the highest value at that stage, and the drive toward higher production volumes at lower costs, it is paramount to employ the dicing method that achieves the highest yield. It is also important to consider that although GaAs’s price is not as high as it used to be, it is still a costly material. Another important aspect must not be neglected: manufacturing and processing of compound semiconductors, especially GaAs, reveals serious industrial safety concerns because of the hazardous chemical compounds found in certain processes. Pure compound GaAs contains 51.8%wt arsenic. It is described as toxic by inhalation and a possible human carcinogen. These facts raise a lot of concerns from an environmental, health and safety standpoint. 2. COMPARISON OF THE DIFFERENT DICING METHODS There are currently three well-known methods to dice GaAs wafers, namely the abrasive saw, scribing and breaking, and laser LMJ dicing processes. Because of GaAs’s specific properties, disadvantages of certain methods that are tolerated when dicing Si wafers because it is a rather forgiving material become unacceptable disadvantages when dicing GaAs. Traditional sawing is the most common dicing technique used in the semiconductor industry in general. Its primary advantage on the Si wafer is the quality of the kerf. But the sawing process induces mechanical constraints that are critical in the case of GaAs. If chipping is acceptable for Si, it is not the case for this brittle compound. Chipping widths of GaAs being larger, the street has to be widened, thereby diminishing the number of chips per wafer. Also, because of the mechanical constraints induced by sawing, chips corners tend to break easily thus rendering the pieces unusable. In general, to achieve an acceptable cutting quality, saw speed has to be reduced to values ranging between 3 and 12mm/s, depending on the wafer’s thickness, thereby considerably slowing the whole process. Table 1 shows a comparison of three dicing methods. With the scribe and break method, street width can be reduced drastically, increasing the number of dies per wafer. This is a real advantage when processing an expensive compound material. However, automation is too low to ensure an acceptable yield. For example, wafers do not always break along the scribed line. This often results into total wafer breakage and loss. This means as well that the processing speed is slow, and a large amount of scrap wafers are required for qualifications. Use of the Laser Microjet, not to be confused with a standard laser, appreciably increases the speed and kerf quality of GaAs wafer dicing. Moreover, it allows free-shape cutting, including multi-project wafers, which is not possible with conventional sawing techniques. 3. WATER-JET GUIDED LASER PROCESSING The Laser Microjet (LMJ) uses a thin water jet as a light-guide to guide the laser onto the work piece (see Fig.1). Apart from guiding the laser, the water jet cools the piece exactly at the place where it is being cut and heated, also removing the molten material. In fact, LMJ is a low-temperature laser dicing system since the measured temperature during any working conditions does not exceed 160°C [2]. The low-pressure jet also insures that no mechanical and no thermal damages are incurred by the wafer during dicing (see Fig.2). The LMJ is therefore particularly efficient on brittle and difficult to machine materials such as GaAs, even for thickness as small as 25μm. Furthermore, the high laminarity of the water jet provides a constant kerf width equal to the diameter of the jet (25 to 75μm according to the nozzle diameter). Another interesting advantage of the LMJ for this specific application is that its speed increases when samples become thinner, while in the case of sawing, it is just the opposite. For thin GaAs wafers, achievable LMJ cutting speeds are very high. Conventional laser ablation of GaAs creates a lot of debris, hard to remove, that can even damage nearby active components. With the Laser Microjet (LMJ) technology, this problem has been overcome. Using a special thin water film, a new technology specific to Synova SA and to the LMJ, keeps the wafer clean and free of particles. The resulting level of chip contamination is equivalent to conventional saw, but the cut is much faster. Free-shape cutting, also known as free-form or arbitrary cutting, of thin wafers has become increasingly important for various applications in microelectronics and medicine, in which chips with arbitrary shape are used. Conventional techniques cannot provide the required flexibility and two-dimensional freedom. Fig.3 presents omni-directional cutting with the LMJ. The GaAs wafer (on the left) was 178μm thick, and for a kerf witdh of 75μm, achieved speed was 15mm/s (the dots on the surface are not residues from the cutting process). The InP wafer (on the right) was 250μm thick, and resulting speed was 2mm/s, single pass. Employing frequency doubled Nd:YAG lasers, the cutting speed could soon be improved. 4. SAFETY Regarding safety issues, several tests have been performed with the LMJ. The most important result was that no arsine gas is detected in the air while cutting GaAs wafers [3]., an important difference to classical laser cutting (see Table 2). This is not surprising since the laser beam is coupled in a water jet and laser pulses are very short (around 450ns). The time for interaction of the laser light with the material is therefore very short and immediately followed by the cooling effect of the water. Though, the concentration of Arsenic in the wastewater is high. Therefore, the wastewater should to be appropriately filtered or recycled. In brief, compared to sawing, GaAs dicing with the Laser Microjet does not require any additional security systems. 5. CONCLUSION To conclude, the Laser Microjet shows indisputable advantages over the more traditional scribe and break and abrasive saw technologies for the dicing of GaAs wafers. 100μm thick wafers can be cut at 60mm/s and outstanding quality is reached. Even although improvements have been done to the traditional methods over the years, they will soon be replaced as wafers become thinner and employ more costly and critical materials. Furthermore, GaAs is not the only material on which the LMJ has already showed industry-leading results. REFERENCES [1]“The McClean Report 2003”, Press Release, IC Insights, 2003. [2] N. Dushkina, B. Richerzhagen: “Dicing of GaAs wafers with Synova Laser Microjet - Challenges, Improvements and Safety Issues”, Technical Digest, ICALEO, 94, 2002. [3] N. Dushkina, “Safely Dicing GaAs Wafers with Lasers”, Technical Papers of ISA, vol. 438, 175-183, 2003. （輸入章及標題） 畢業(yè)設計（論文） 數(shù)控高壓水射流切割機 學 院 年級專業(yè) 學生姓名 指導教師 專業(yè)負責 答辯日期 3 任務書 學院： 系級教學單位： 學 號 學生 姓名 專 業(yè) 班 級 機械制造 課 題 題 目 數(shù)控高壓水射流切割機床設計 來 源 自選 主 要 內 容 1. 機床的總體設計 2. 數(shù)控加工平臺（進給系統(tǒng)）設計 3. 數(shù)控功能設計：一周內完成。 4. 水射流切割裝置的設計 5. 過濾裝置的設計 基 本 要 求 1. A0圖三張（包括CAD 圖三張），A1圖紙一張（零件圖） 2. 設計說明書約50頁 3. 翻譯外文資料一篇 參 考 資 料 1.機械設計手冊第2卷（新版），王文斌，機械工業(yè)出版社 2.特種加工，劉晉春 趙家齊等，機械工業(yè)出版社 3.金屬切學機床，戴曙，機械工業(yè)出版社 4.馬水仙。水射流切割裝置。國外金屬加工。2001年第2期等。 周 次 1—4周 5—8周 9—12周 13—16周 17—18周 應 完 成 的 內 容 查找相關資料 編寫開題報告 計算數(shù)據(jù) 計算完成第一張A0圖紙 完成第二章AO圖紙和部分第三張A0圖紙 完成第三張A0圖紙和零件圖 檢查答辯 指導教師：王軍（男） 系級教單位審批： 說明：如計算機輸入，表題黑體小三號字，內容五號字。本任務書一式二份，教師、學生各執(zhí)一份。