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附錄2 英文原文 附錄1 英文翻譯 水射流與激光結(jié)合加工在半導(dǎo)體中的應(yīng)用 P. Ogawa, D. Perrottet， F. Wagner， R. Housh， B. Richerzhagen* * SA， Ch Synova. delaDentd’Oche， CH-1024 Ecublens，瑞士 電子郵件： richerzhagen@synova.ch 摘要 最近幾年，半導(dǎo)體晶圓已經(jīng)占據(jù)了市場的很大一部分，它在復(fù)合材料的生產(chǎn)中超過其他硅產(chǎn)品的知名度。由于這些III/V 半導(dǎo)體材料的加工工藝要求高，因此產(chǎn)生了許多與傳統(tǒng)加工不同的加工工藝和方法。不同的切割方法之間存在著顯著差異。在傳統(tǒng)切割中， 由于存在嚴(yán)重的熱損失，使工件的切口處產(chǎn)生結(jié)晶體。 現(xiàn)在，有了讓人滿意的解決方法---與激光微射流（ lmj ）這一成果 ，一個(gè)革命性耦合激光和水射流的技術(shù)。這是一種比其他加工方法更快捷和清潔的加工方法，并且能產(chǎn)生很高的加工精度。此外，它可以切割任意的形狀，這在其他傳統(tǒng)加工方法中是不可能的。最后，安全問題不應(yīng)該忘記。事實(shí)上，由于融入了水射流，在加工過程的檢測中沒有發(fā)現(xiàn)產(chǎn)生有毒氣體。 關(guān)鍵詞：激光切割，水射流引導(dǎo)激光，砷化鎵，化合物半導(dǎo)體。 1.導(dǎo)言 硅占半導(dǎo)體晶圓市場已經(jīng)超過三十年。然而，持續(xù)的要求，更高的速度和增加小型化帶動無線電和寬帶通訊行業(yè)的發(fā)展，使III/V半導(dǎo)體材料，如砷化鎵（ GaAs ）的和磷化銦（ InP） 的需求量增大。事實(shí)上，這些材料的電學(xué)性比純硅更具有優(yōu)勢，它們在高頻率的運(yùn)作，改善信號接收效果，更好的處理信號在擁擠的頻帶，和增大大的功率效率更有優(yōu)勢。根據(jù)“IC 的洞察”的市場研究（公司總部設(shè)在斯科茨代爾，亞利桑那州），在2002年占市場87 ％的份額的化合物半導(dǎo)體集成電路仍然主要是基于砷化鎵。半導(dǎo)體市場已經(jīng)把他們生產(chǎn)的產(chǎn)品定在這個(gè)方向。 “IC 的洞察”調(diào)查，在2002年到2007年化合物半導(dǎo)體每年平均的增長率為22%。相較之下，比同一時(shí)期的IC市場增長率為10 ％ 。在2000年該化合物半導(dǎo)體IC市場的高峰24.2億美元，但在2002年下跌至16.9億美元。 “IC 的洞察”預(yù)測增長強(qiáng)勁，在隨后的歲月，與不斷擴(kuò)大到2007年，當(dāng)市場將會擴(kuò)大一倍以上，達(dá)46.5億美元。 今天，砷化鎵市場已不再被認(rèn)為是為特定盈利市場。最重要的應(yīng)用不光是無線通信業(yè)，砷化鎵是揭示了它的潛力在光電電子應(yīng)用在軍事，醫(yī)療，特別是LED照明領(lǐng)域。標(biāo)準(zhǔn)的生產(chǎn)技術(shù)仍然需要變得更加適應(yīng)這一新的高增長的市場。減少芯片尺寸低于500um的規(guī)定，使用更薄的晶圓比100um的，縮小晶圓厚度也有其優(yōu)點(diǎn)，可以降低其溫度梯度。 由于砷化鎵是非常脆弱，改善方法是用樹脂葉片。這需要提高切削速度和質(zhì)量。此外，考慮制造晶圓的切割過程是精密的，這需要使用新的切割方法，達(dá)到高生產(chǎn)率。此外，砷化鎵的價(jià)格昂貴也是需要考慮的。另一個(gè)不如忽視的重要方面是：制造和加工的化合物半導(dǎo)體，尤其是砷化鎵，對安全有嚴(yán)重的威脅。砷化鎵氣體有毒，是引起人類致癌物質(zhì)。這些事實(shí)提出了很多的關(guān)注，從環(huán)境，健康和安全的立場。 2 .比較不同的切割方法 目前有三種加工方法，用來加工砷化鎵晶圓，即砂輪切斷，刨切，和激光引導(dǎo)水射流切割。由于砷化鎵的特定屬性，缺點(diǎn)不容忽視，當(dāng)切割硅晶片，因?yàn)閯澠榛壴诩庸r(shí)有很多缺點(diǎn)。傳統(tǒng)的切割方法在加工半導(dǎo)體時(shí)會遇到很多問題。激光引導(dǎo)水射流切割主要優(yōu)勢切割硅晶圓時(shí)的切縫質(zhì)量高。如果是傳統(tǒng)的切割方法的話，由于硅晶圓非常的脆，加工出高質(zhì)量的切縫是很難實(shí)現(xiàn)的。刨切寬度較大的砷化鎵時(shí)，加工面面要拓寬，從而減少芯片數(shù)量的百分之晶圓。此外，由于機(jī)械的限制，導(dǎo)致工件的邊緣往往容易破碎，從而使該件無法使用。在一般情況下，要達(dá)到一個(gè)符合條件的切割質(zhì)量，切削速度要在3到12mm/s之間，這主要取決于晶圓的厚度，從而大大減緩了整個(gè)加工效率。表1顯示的是3種切割方法的比較。 水射流切割可以在同樣的毛配件中切削出更多的工件，既節(jié)約材料降低成本。在加工一個(gè)昂貴的復(fù)合材料，這是一個(gè)真正的優(yōu)勢。舉例來說，晶圓并不總是沿內(nèi)切線。這往往是晶圓破損的主要原因。這意味著，要清楚處理大量的廢棄晶圓時(shí)間和精力。利用激光引導(dǎo)水射流，不需要將它與一個(gè)標(biāo)準(zhǔn)的激光看待，可以增加砷化鎵晶圓的切削速度，提高切縫質(zhì)量。此外，它可以切割任意形狀，包括多項(xiàng)目晶圓，這在傳統(tǒng)切割中是不可能的。 3.水射流引導(dǎo)激光加工 激光引導(dǎo)水射流采用了薄水射流作為一個(gè)引導(dǎo)件，以指導(dǎo)工件加工（參見圖1 ） 。除了引導(dǎo)激光，水射流冷卻作用正是它的優(yōu)勢所在，它可以降低切削時(shí)的溫度，也就消除了材料的熔融。事實(shí)上，在激光引導(dǎo)水射流是一個(gè)低溫切割系統(tǒng)，在任何切削過程中檢測的工作的切削溫度不會超過160 ° C的[ 2 ] 。 這種水射流很安全，在晶圓在切割中不存在由于機(jī)械和熱而產(chǎn)生的損失（見圖2 ） 。該水射流提供了一個(gè)不斷切縫寬度等于直徑的射流，因此，特別是對非常脆和難以加工材料如砷化鎵 ，即使厚度小25 μ m也可加工， （ 25至75 μ m的根據(jù)該噴嘴直徑） 。另一個(gè)明顯的優(yōu)勢，這種水射流對于此特定的應(yīng)用是當(dāng)工件變薄時(shí)它的切削速度和質(zhì)量會增加，而在傳統(tǒng)切割中，這是剛好相反。薄砷化鎵晶圓，可實(shí)現(xiàn)非常高切割速度。 傳統(tǒng)的激光切割砷化鎵時(shí)產(chǎn)生大量的碎片，很難消除，甚至可以破壞附近的活性成分。在水射流切割中，這個(gè)問題已經(jīng)克服。使用一種特殊的薄水膜，新技術(shù)的具體不斷晶圓清潔和免費(fèi)的粒子。由此產(chǎn)生的水平芯片的污染，比傳統(tǒng)的切削方法要小得多。 任意形狀的切割，在薄晶圓加工中已變得日益重要，為各種應(yīng)用在微電子學(xué)和醫(yī)學(xué)，在其中的任意形狀使用。傳統(tǒng)技術(shù)不能提供所需的靈活性和兩維自由度。圖3介紹了水射流全方位的定向切割。左圖的砷化鎵晶圓厚175μm，切縫寬75μm的，所取得的速度15mm/s（點(diǎn)表面上是沒有殘留） 。該切削的晶圓（右側(cè)）是250μm厚，切削速度2mm/s 。 4.安全 關(guān)于安全問題，多次對水射流測試表明在切割過程中空氣里沒有發(fā)現(xiàn)存在砷化氫的氣體，切割砷化鎵晶圓[ 3 ] ，一個(gè)重要的差異，以傳統(tǒng)激光切割為例（見表2 ） 這是不得不令人驚訝，因?yàn)榧す庖龑?dǎo)水射流是水射流和再加上在一個(gè)很短激光脈沖（約450ns ）相互作用的雷射光與物質(zhì)。由于有水的存在，在切割時(shí)不會產(chǎn)生有毒氣體，而是是有毒氣體溶解到水中。因?yàn)閺U水中砷的濃度很高，所以廢水應(yīng)當(dāng)適當(dāng)?shù)倪^濾或循環(huán)。與傳統(tǒng)切割相比，激光引導(dǎo)水射流切割砷化鎵不需要任何額外的保安系統(tǒng)。 5 .結(jié)論 總括而言，較傳統(tǒng)的切割方法，水射流切割展示了無可爭議的優(yōu)勢。 100μm厚的晶圓可以切割在六60mm/ s和卓越的品質(zhì)是達(dá)成共識。甚至，盡管傳統(tǒng)方法已有所改善所做，多年來，他們將很快取代晶圓變薄和聘用更多的成本和關(guān)鍵材料。 參考 [ 1 ] “2003年麥卡琳報(bào)告” ，新聞稿， IC 的洞察， 2003年。 [2] N. Dushkina, B. Richerzhagen: “劃片砷化鎵晶圓與 思諾瓦激光微-挑戰(zhàn)，改善和安全 [3] N. Dushkina “安全切割砷化鎵晶圓與雷射器” ，技術(shù)文件的工業(yè)標(biāo)準(zhǔn)結(jié)構(gòu) ，第一卷。 438 ， 175-183 ， 2003 。 附錄2 英文原文 Chipping-free dicing of III/V semiconductor materials with the water P. Ogawa, D. Perrottet, F. Wagner, R. Housh, B. Richerzhagen* * Synova SA, Ch. De la Dent d’Oche, CH-1024 Ecublens, Switzerland E-mail: richerzhagen@synova.ch ABSTRACT For a few years now the semiconductor wafer market has turned a substantial part of its production towards compound materials, faster than the well-known silicon. The mechanical and chemical properties of these III/V semiconductor materials (of which the most used being gallium arsenide, GaAs) require new specialized technologies. In particular, the singulation process is proved to be delicate. Different dicing methods exist, but important differences in results can be observed. The saw creates consequent chipping as well as broken edges. Conventional lasers should be avoided because of important heat damages. The scribe and break method can create cracks that tend to break wafers. The most satisfying results are obtained with the Laser Microjet (LMJ), a revolutionary technology coupling a laser and a water jet. It is faster and cleaner than any other process, and generates an impressive kerf quality. Furthermore, it allows free-shape cutting, which is impossible with blades. At last, the safety question should not be forgotten. In fact, because of the waterjet, no toxic arsenic gas could be detected. Keywords: Laser cutting, Water jet guided laser, GaAs, Compound semiconductors, Chipping-free 1. INTRODUCTION Silicon has dominated the semiconductor wafer market for more than three decades. However, the continuing demands for higher speed and increasing miniaturization have driven the wireless and broadband communications industries to use the brittle and difficult-to-handle, but much faster (meaning higher carrier mobility), III/V semiconductor materials, such as gallium arsenide (GaAs) and indium phosphide (InP). Indeed, these materials’ electrical properties give them several performance advantages over pure Si, including high frequency operation, improved signal reception, better signal processing in congested frequency bands, and greater power efficiency. According to IC Insights, market research firms based in Scottsdale, Arizona, compound semiconductor ICs are still largely based on GaAs, which accounted for 87% of the market in 2002. Most of the big players in the semiconductor market have turned their production in this direction. IC Insights expects the compound semiconductor IC market to experience an average annual growth rate of 22% from 2002 through 2007. In comparison, the total IC market will grow at a rate of 10% over the same time period. The compound semiconductor IC market peaked at $2.42 billion in 2000, but fell to $1.69 billion in 2002. IC Insights forecasts strong growth in the following years, with a continual expansion through 2007, when the market will have more than doubled to $4.65 billion. The GaAs market is no longer considered a niche market. Today, if the most important application remains the wireless communication industry, GaAs is revealing its potential in opto-electronics for applications in the military, the medical and especially the LED lighting domains. Standard production technologies still need to become more adapted to this new high-growth market. Decreasing the chip size below 500μm requires using wafers thinner than 100μm; shrinking the wafers’ thickness also have the advantage of lowering its temperature gradient. The use of GaAs wafers, which might be as thin as 25μm, creates problems when they reach the last level of the production chain – chip singulation. Because GaAs is very brittle and fragile, even improved saw methods using resinoid blades do not provide the desired high cutting speed and yield. Furthermore, considering that dicing is the very last process of wafer manufacturing, which means that the wafer has the highest value at that stage, and the drive toward higher production volumes at lower costs, it is paramount to employ the dicing method that achieves the highest yield. It is also important to consider that although GaAs’s price is not as high as it used to be, it is still a costly material. Another important aspect must not be neglected: manufacturing and processing of compound semiconductors, especially GaAs, reveals serious industrial safety concerns because of the hazardous chemical compounds found in certain processes. Pure compound GaAs contains 51.8%wt arsenic. It is described as toxic by inhalation and a possible human carcinogen. These facts raise a lot of concerns from an environmental, health and safety standpoint. 2. COMPARISON OF THE DIFFERENT DICING METHODS There are currently three well-known methods to dice GaAs wafers, namely the abrasive saw, scribing and breaking, and laser LMJ dicing processes. Because of GaAs’s specific properties, disadvantages of certain methods that are tolerated when dicing Si wafers because it is a rather forgiving material become unacceptable disadvantages when dicing GaAs. Traditional sawing is the most common dicing technique used in the semiconductor industry in general. Its primary advantage on the Si wafer is the quality of the kerf. But the sawing process induces mechanical constraints that are critical in the case of GaAs. If chipping is acceptable for Si, it is not the case for this brittle compound. Chipping widths of GaAs being larger, the street has to be widened, thereby diminishing the number of chips per wafer. Also, because of the mechanical constraints induced by sawing, chips corners tend to break easily thus rendering the pieces unusable. In general, to achieve an acceptable cutting quality, saw speed has to be reduced to values ranging between 3 and 12mm/s, depending on the wafer’s thickness, thereby considerably slowing the whole process. Table 1 shows a comparison of three dicing methods. With the scribe and break method, street width can be reduced drastically, increasing the number of dies per wafer. This is a real advantage when processing an expensive compound material. However, automation is too low to ensure an acceptable yield. For example, wafers do not always break along the scribed line. This often results into total wafer breakage and loss. This means as well that the processing speed is slow, and a large amount of scrap wafers are required for qualifications. Use of the Laser Microjet, not to be confused with a standard laser, appreciably increases the speed and kerf quality of GaAs wafer dicing. Moreover, it allows free-shape cutting, including multi-project wafers, which is not possible with conventional sawing techniques. 3. WATER-JET GUIDED LASER PROCESSING The Laser Microjet (LMJ) uses a thin water jet as a light-guide to guide the laser onto the work piece (see Fig.1). Apart from guiding the laser, the water jet cools the piece exactly at the place where it is being cut and heated, also removing the molten material. In fact, LMJ is a low-temperature laser dicing system since the measured temperature during any working conditions does not exceed 160°C [2]. The low-pressure jet also insures that no mechanical and no thermal damages are incurred by the wafer during dicing (see Fig.2). The LMJ is therefore particularly efficient on brittle and difficult to machine materials such as GaAs, even for thickness as small as 25μm. Furthermore, the high laminarity of the water jet provides a constant kerf width equal to the diameter of the jet (25 to 75μm according to the nozzle diameter). Another interesting advantage of the LMJ for this specific application is that its speed increases when samples become thinner, while in the case of sawing, it is just the opposite. For thin GaAs wafers, achievable LMJ cutting speeds are very high. Conventional laser ablation of GaAs creates a lot of debris, hard to remove, that can even damage nearby active components. With the Laser Microjet (LMJ) technology, this problem has been overcome. Using a special thin water film, a new technology specific to Synova SA and to the LMJ, keeps the wafer clean and free of particles. The resulting level of chip contamination is equivalent to conventional saw, but the cut is much faster. Free-shape cutting, also known as free-form or arbitrary cutting, of thin wafers has become increasingly important for various applications in microelectronics and medicine, in which chips with arbitrary shape are used. Conventional techniques cannot provide the required flexibility and two-dimensional freedom. Fig.3 presents omni-directional cutting with the LMJ. The GaAs wafer (on the left) was 178μm thick, and for a kerf witdh of 75μm, achieved speed was 15mm/s (the dots on the surface are not residues from the cutting process). The InP wafer (on the right) was 250μm thick, and resulting speed was 2mm/s, single pass. Employing frequency doubled Nd:YAG lasers, the cutting speed could soon be improved. 4. SAFETY Regarding safety issues, several tests have been performed with the LMJ. The most important result was that no arsine gas is detected in the air while cutting GaAs wafers [3]., an important difference to classical laser cutting (see Table 2). This is not surprising since the laser beam is coupled in a water jet and laser pulses are very short (around 450ns). The time for interaction of the laser light with the material is therefore very short and immediately followed by the cooling effect of the water. Though, the concentration of Arsenic in the wastewater is high. Therefore, the wastewater should to be appropriately filtered or recycled. In brief, compared to sawing, GaAs dicing with the Laser Microjet does not require any additional security systems. 5. CONCLUSION To conclude, the Laser Microjet shows indisputable advantages over the more traditional scribe and break and abrasive saw technologies for the dicing of GaAs wafers. 100μm thick wafers can be cut at 60mm/s and outstanding quality is reached. Even although improvements have been done to the traditional methods over the years, they will soon be replaced as wafers become thinner and employ more costly and critical materials. Furthermore, GaAs is not the only material on which the LMJ has already showed industry-leading results. REFERENCES [1]“The McClean Report 2003”, Press Release, IC Insights, 2003. [2] N. Dushkina, B. Richerzhagen: “Dicing of GaAs wafers with Synova Laser Microjet - Challenges, Improvements and Safety Issues”, Technical Digest, ICALEO, 94, 2002. [3] N. Dushkina, “Safely Dicing GaAs Wafers with Lasers”, Technical Papers of ISA, vol. 438, 175-183, 2003. （輸入章及標(biāo)題） 畢業(yè)設(shè)計(jì)（論文） 數(shù)控高壓水射流切割機(jī) 學(xué) 院 年級專業(yè) 學(xué)生姓名 指導(dǎo)教師 專業(yè)負(fù)責(zé) 答辯日期 3 任務(wù)書 學(xué)院： 系級教學(xué)單位： 學(xué) 號 學(xué)生 姓名 專 業(yè) 班 級 機(jī)械制造 課 題 題 目 數(shù)控高壓水射流切割機(jī)床設(shè)計(jì) 來 源 自選 主 要 內(nèi) 容 1. 機(jī)床的總體設(shè)計(jì) 2. 數(shù)控加工平臺（進(jìn)給系統(tǒng)）設(shè)計(jì) 3. 數(shù)控功能設(shè)計(jì)：一周內(nèi)完成。 4. 水射流切割裝置的設(shè)計(jì) 5. 過濾裝置的設(shè)計(jì) 基 本 要 求 1. A0圖三張（包括CAD 圖三張），A1圖紙一張（零件圖） 2. 設(shè)計(jì)說明書約50頁 3. 翻譯外文資料一篇 參 考 資 料 1.機(jī)械設(shè)計(jì)手冊第2卷（新版），王文斌，機(jī)械工業(yè)出版社 2.特種加工，劉晉春 趙家齊等，機(jī)械工業(yè)出版社 3.金屬切學(xué)機(jī)床，戴曙，機(jī)械工業(yè)出版社 4.馬水仙。水射流切割裝置。國外金屬加工。2001年第2期等。 周 次 1—4周 5—8周 9—12周 13—16周 17—18周 應(yīng) 完 成 的 內(nèi) 容 查找相關(guān)資料 編寫開題報(bào)告 計(jì)算數(shù)據(jù) 計(jì)算完成第一張A0圖紙 完成第二章AO圖紙和部分第三張A0圖紙 完成第三張A0圖紙和零件圖 檢查答辯 指導(dǎo)教師：王軍（男） 系級教單位審批： 說明：如計(jì)算機(jī)輸入，表題黑體小三號字，內(nèi)容五號字。本任務(wù)書一式二份，教師、學(xué)生各執(zhí)一份。 附錄3 開題報(bào)告 附錄3 開題報(bào)告 一、綜述本課題國內(nèi)外研究動態(tài)，說明選題的依據(jù)和意義（宋體，小四號） 1. 選題依據(jù) 超高壓水射流技術(shù)其實(shí)并非新近出現(xiàn)，早在1974年，美國的FLOW公司就首先將其應(yīng)用于工業(yè)切割領(lǐng)域并使其商業(yè)化。2002年，美國FLOW公司將超高壓水射流技術(shù)帶入了一個(gè)革命性的階段，發(fā)布了最高壓力可達(dá)87,000psi的超高壓水射流設(shè)備，大大提高了生產(chǎn)效率 的同時(shí)使用成本也較之以前下降40%。隨著對水射流技術(shù)地不斷研發(fā)、提升、應(yīng)用，其發(fā)展和使用前景將無可限量。 目前，國際上像美國、德國、前蘇聯(lián)、意大利都攻破了超高壓水切割的技術(shù)，最高切割壓力可達(dá)550MPa。中國開展這項(xiàng)工作的研究有近四十年的時(shí)間，機(jī)械部、航空航天部、國家船舶工業(yè)總公司都先后立項(xiàng)研究，但超高壓水切割一直處在實(shí)驗(yàn)室階段，尚未用于穩(wěn)定的商業(yè)運(yùn)行。國內(nèi)其它企業(yè)也有生產(chǎn)水切割設(shè)備的廠家，實(shí)際運(yùn)行壓力僅在220MPa左右，屬中低壓水平。壓力愈高，切割的工藝性愈好，切割速度愈快，尤其在厚板切割時(shí)，中低壓(200MPa)的水切割機(jī)，不能保證被切割材料頂部和底部的切割曲線一致性，甚至切不透，切割速度很慢。 2.選題意義 較之激光、等離子、線切割等傳統(tǒng)的切割方式，水射流切割技術(shù)確實(shí)有其獨(dú)特、顯著的優(yōu)勢： a.切割品質(zhì)優(yōu)異 水射流是一種冷加工方式，‘水刀’不磨損且半徑很小，能加工具有銳邊輪廓的小圓弧。加工本身無熱量產(chǎn)生且加工力小，加工表面不會出現(xiàn)熱影響區(qū)，自然切口處 材料的組織結(jié)構(gòu)不會發(fā)生變化，無需二次加工，無裂縫、無毛邊、無浮渣，因此其切割品質(zhì)優(yōu)良 b.幾乎沒有材料和厚度的限制 無論是金屬類如普通鋼板、不銹鋼、銅、鈦、鋁合金等，或是非金屬類如石材、陶瓷、玻璃、橡塑、紙張及復(fù)合材料，皆可適用。 c.節(jié)省成本 水切割所產(chǎn)生橫向及縱向的作用力極小，不會產(chǎn)生熱效應(yīng)或變形或細(xì)微的裂縫，不需二次加工，既可鉆孔亦可切割，降低了切割時(shí)間及制造成本。 ????d.清潔環(huán)保無污染 在切割過程中不產(chǎn)生弧光、灰塵及有毒氣體，操作環(huán)境整潔，符合嚴(yán)格的環(huán)保要求。 二、研究的基本內(nèi)容，擬解決的主要問題：（宋體，小四號） 通過查閱各種資料，初步確定本次畢業(yè)設(shè)計(jì)需要解決的主要問題有：機(jī)床的總體設(shè)計(jì)；數(shù)控加工平臺（進(jìn)給系統(tǒng)）的設(shè)計(jì)；數(shù)控系統(tǒng)功能設(shè)計(jì)；水射流切割裝置的設(shè)計(jì)；過濾裝置的設(shè)計(jì)等。 三、研究步驟、方法及措施：（宋體，小四號） 1. 機(jī)床的總體設(shè)計(jì)：數(shù)控水射流切割機(jī)床的基本理論、機(jī)床的布局形式等。 2. 數(shù)控加工平臺（進(jìn)給系統(tǒng)）設(shè)計(jì)：滾珠絲杠選擇、滾珠絲杠支承選擇、選擇伺服電機(jī)、伺服系統(tǒng)增益、精度驗(yàn)算。 3. 數(shù)控系統(tǒng)功能設(shè)計(jì)： 4. 水射流切割裝置設(shè)計(jì)：超高壓水射流發(fā)生器、磨料混合和液流處理、噴嘴等。 5. 過濾裝置的設(shè)計(jì)： 四、研究工作進(jìn)度：（宋體，小四號） 1． 查找資料，編寫開題報(bào)告：四周內(nèi)完成 2． 機(jī)床的總體設(shè)計(jì)：兩周半的時(shí)間完成 3. 數(shù)控加工平臺（進(jìn)給系統(tǒng)）設(shè)計(jì)：三周半的時(shí)間完成 4. 數(shù)控功能設(shè)計(jì)：一周內(nèi)完成。 5. 水射流切割裝置的設(shè)計(jì)：兩周內(nèi)完成 6. 過濾裝置的設(shè)計(jì)：一周半的時(shí)間完成 7. 整理檢查畢業(yè)論文：一周半的時(shí)間完成 五、主要參考文獻(xiàn)：（宋體，五號） 1. 徐博斌 何永義. 水射流切割機(jī)床數(shù)控系統(tǒng)的設(shè)計(jì).機(jī)電一體化2000,006(004):P.39-42 2. 遇羅文. 高壓水射流切割技術(shù)和前混切割設(shè)備.新技術(shù)新工藝1997,000(006):P.18-19 3. 陳明，侯健.超高壓磨料射流切割噴嘴裝置研制及其應(yīng)用.機(jī)械科學(xué)與技術(shù) 1997,026(004):P.31-32,36 4.馬水仙。水射流切割裝置。國外金屬加工。2001年第2期 5．網(wǎng)查資料: 數(shù)控技術(shù)在超高壓水射流切割機(jī)床中的應(yīng)用（http://articles.e-works.net.cn/445/Article39381.htm) 超高壓水射流技術(shù)原理的應(yīng)用（http://www.gzboao.cn/blog/post/chaogaoshuiyashuisheliujishu.html） 超高壓水切割技術(shù)起源及其發(fā)展評測（http://hi.baidu.com/xiangmuziliao/blog/item/8f3849f4874380d8f2d385a1.html） 水噴射加工（http://mt.nstl.gov.cn/commchanne）